Volume 3

December 2016, Volume 3, Number 4

Using Advanced Inspection Method (Three-Dimensional Ultrasonic) in Recognition of Defects in High Thickness Pipelines
A.R. Sahebi1, S. Hosseinzadeh2, and V. Salimasadi3, Islamic Azad University, Iran

September 2016, Volume 3, Number 3

On Decreasing of Dimensions of Field-Effect Transistors with Several Sources
E. L. Pankratov and E. A. Bulaeva, Nizhny Novgorod State University, Russia

Modeling, Analyzing and Safety Aspects of Torsion and Noise Effects on Round Mild Steel Shafts by Response Surface
Methodology
N. Boominathan1, G. K. Vijayaraghavan2 and R. Kathiravan1, 1Periyar Maniammai University and 2Ahmed College
of Engineering, India

New Experiment System for the Interaction Between Soft Rock and Water : A Case Study on the Mogao Grottoes
Support Rock
Zhu Guolong, Qin Xinzhan, Hao Naia and Zhang Fang, China University of Mining and Technology, China

June 2016, Volume 3, Number 2

Special Issue - The Fourth International Conference on Recent Trends in Mechanical Engineering (RTME 2016)

Thermal and Metrological Studies on YTTRIA Stabilized Zirconia Thermal Barrier Coatings and a Simulated Model to
Co-Relate the Findings
Shankar.V, V. R. Reghu, Parvati Ramaswamy and KevinVattappara, Christ University, India
Regular Issue

Tem Crams of Distinctive NLO Material (Second Harmonic Generative Type) Barium Para Nitrophenolate (BPNP)
K. Senthil Kannan and N. Balasubramanian, St.Eugene University, Zambia

Dependence of Charge Carriers Mobility in the P-N-Heterojunctions on Composition of Multilayer Structure
E. L. Pankratov1 and E. A. Bulaeva2, 1Nizhny Novgorod State University, Russia and 2Nizhny Novgorod State University
of Architecture and Civil Engineering, Russia

Using Porosity of Epitaxial Layer to Decrease Quantity of Radiation Defects Generated During Radiation Processing
of a Multilayer Structure
E. L. Pankratov1 and E. A. Bulaeva2, 1Nizhny Novgorod State University, Russia and 2Nizhny Novgorod State University
of Architecture and Civil Engineering, Russia

March 2016, Volume 3, Number 1

Modification of Dopant Concentration Profile in a Field-Effect Heterotransistor for Modification Energy Band Diagram
E.L.Pankratov and E.A. Bulaeva, Nizhny Novgorod State University, Russia

Design of Different Digital Circuits Using Single Electron Devices
Banani Talukdar, P.C.Pradhan and Amit Agarwal, Sikkim Manipal Institute of Technology, India

Review Paper on New Technology Based Nanoscale Transistor
Banani Talukdar, P.C.Pradhan and Amit Agarwal, Sikkim Manipal Institute of Technology, India